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Improved piezoelectric properties through manganese-doping in phase coexistence region in lead strontium zirconate titanate (PSZT) thin films.
- Source :
-
Journal of Applied Physics . 4/28/2023, Vol. 133 Issue 16, p1-8. 8p. - Publication Year :
- 2023
-
Abstract
- In the quaternary system PbTiO3-PbZrO3-SrTiO3-SrZrO3, compositions that lie close to the antiferroelectric tetragonal and ferroelectric rhombohedral (AFET-FER) phase boundary have potential applications in micro-actuators. However, in thin films, this phase boundary is reported to shift significantly to the zirconium-rich region. Hence, it is necessary to seek alternative approaches to stabilize the tetragonal AFE phase in such compositions. Therefore, this study explores the effect of B-site Mn3+-doping on their structure. Dielectric, ferroelectric, and piezoelectric characteristics of such thin films have been compared with those with increasing Zr/Ti ratios to understand the efficacy of this approach. Transverse piezoelectric coefficient, e31,f, and bipolar strain are found to be higher in Mn3+-doped thin films. Furthermore, large strains and e31,f in thin films have been correlated with structural modifications revealed by systematic Raman spectroscopic investigations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 133
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 163421054
- Full Text :
- https://doi.org/10.1063/5.0145281