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Positive charge-mediated phase modulation of MoTe2 synthesized by molecular beam epitaxy.

Authors :
Jeong, Jaehun
Kim, Hyeon-Sik
Kwon, Gihyeon
Park, Jeehong
Kim, Dasol
Yi, Yeonjin
Cho, Mann-Ho
Source :
Applied Surface Science. Jun2023, Vol. 623, pN.PAG-N.PAG. 1p.
Publication Year :
2023

Abstract

[Display omitted] • Positive charge-mediated phase modulation of the crystal structure in 2D MoTe 2 synthesized by molecular beam epitaxy. • Structural phase of MoTe 2 is significantly influenced by the stoichiometric ratio of molybdenum to tellurium, and the tellurium adatoms make the 1T' phase more stable than the 2H phase. • Based on the energy difference and energy barrier between the two phases, the effects of doping on the structure during and after MoTe 2 synthesis were verified. Polymorphic phase transition between semi-conducting 2H and semi-metallic 1T′ in MoTe 2 has garnered significant interest due to its wide applicability for memory device. Recently, it has been reported that charge doping is a prospective method for facilitating practical application of phase transition. In particular, the positively doped system with lower energy barrier between two phases is more advantageous than the negatively doped system. However, although various methods for negative charge-mediated phase transition have been developed, study on positive charge-mediated phase transition is scarce due to the requirement of high charge density. Herein, we report positive charge-mediated phase modulation in MoTe 2 synthesized by molecular beam epitaxy. The structural phase of MoTe 2 is significantly influenced by the stoichiometric ratio of molybdenum to tellurium, and the tellurium adatoms make 1T' phase more stable than 2H phase. Photoelectron spectroscopy reveals that positive charge doping by electron transfer to tellurium adatoms is crucial in the determination of phase. Finally, based on the energy difference and energy barrier between two phases, the doping effects during and after synthesis are verified. This study on the structure modulation of MoTe 2 provides physical insight for phase transition as well as a basis for the development of nanoscale electronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01694332
Volume :
623
Database :
Academic Search Index
Journal :
Applied Surface Science
Publication Type :
Academic Journal
Accession number :
163468811
Full Text :
https://doi.org/10.1016/j.apsusc.2023.156988