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Weak antilocalization and topological edge states in PdSn4.

Authors :
Karn, N. K.
Sharma, M. M.
Awana, V. P. S.
Source :
Journal of Applied Physics. May2023, Vol. 133 Issue 17, p1-13. 13p.
Publication Year :
2023

Abstract

Here, we report a successful synthesis of single crystals of a topological semimetal (TSM) candidate, PdSn4, using a self-flux route. The synthesized crystal is well characterized through x-ray diffraction (XRD), field emission scanning electron microscopy, and x-ray photoelectron spectroscopy. A detailed Rietveld analysis of the powder XRD pattern of PdSn4 confirmed the same to crystallize in an Aea2 space group instead of reported Ccce. A large magnetoresistance (MR) along with Shubnikov–de Haas (SdH) oscillations have been observed in magneto-transport measurements at 2 K. The presence of weak antilocalization (WAL) effect in the synthesized PdSn4 crystal is confirmed and analyzed using Hikami Larkin Nagaoka formalism, being applied on magnetoconductivity of the same at a low magnetic field. An extended Kohler's rule is implemented on MR data to determine the role of scattering processes and temperature-dependent carrier density on the transport phenomenon in PdSn4. Furthermore, the non-trivial band topology and the presence of edge states are shown through density functional theory-based theoretical calculations. All calculations are performed considering the Aea2 space group symmetry. The calculated Z2 invariants (0; 0 1 0) suggest the presence of weak topological insulating properties in PdSn4. A clear evidence of topological edge states at Γ point is visible in calculated edge states spectra. This is the first report on PdSn4, showing the presence of SdH oscillation in magneto-transport measurements. Also, the presence of a weak insulating phase in PdSn4 is described for the first time on the basis of calculated Z2 invariants. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
133
Issue :
17
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
163561900
Full Text :
https://doi.org/10.1063/5.0145377