Improvement of charge kinetics of MoS2 nano-petal based Schottky device by incorporation of W: A comparative study of structural, optical, and electrical properties.

Molybdenum Tungsten Di-Sulphide is a semiconducting alloy of different TMD (transition metal dichalcogenide) materials that has enormous tunable structural, optical, and electrical attributes. In this research, we have performed the hydrothermal synthesization of Mo 1-x W x S 2 nanocomposites with different molar concentration of tungsten (i.e. x = 0, 0.1, 0.2, 0.3) and fabricated Al/Mo 1-x W x S 2 /ITO structured Schottky Barrier diodes. Characterization of their structural, optical, and charge transport attributes are compared. In this alloy formation, the amount of W (tungsten) concentration has a great impact on the particle size of composites. The transportation of charges via the metal-semiconductor junction is the basis for the superiority of thin film semiconductor devices like the Schottky diode. The diode parameters as well as charge transfer characteristics were analyzed by Impedance Spectroscopy and the theory of SCLC (space charge limited current). The calculated mobility and transit time for the Mo 0.8 W 0.2 S 2 device are 5.65 × 10−4 m2 V−1 s−1 and 1.59 ns respectively. These results are better than the rest of the devices. Dramatic conductivity enhancement for the Mo 0.8 W 0.2 S 2- based Schottky device is observed. As a result, this work not only investigates Al/MoWS 2 interface in detail but also explains the faster and better charge transport of the Mo 0.8 W 0.2 S 2 -based device from a structural perspective. [Display omitted] • Hydrothermal Synthesis of MoWS 2 nanocomposites and comparative study with pure MoS 2. • Fabrication of Al/Mo 1-x W x S 2 /ITO device and investigation of charge transportation. • Significant variation of charge kinetics by incorporating W into MoS 2. • Diode parameters and interfacial properties analyzed by Impedance Spectroscopy. • Mo 0.8 W 0.2 S 2 -based SBD exhibited 1493% improvement in conductivity compared to MoS 2. [ABSTRACT FROM AUTHOR]