Photopatternable High‐k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties.

Polysilsesquioxanes (PSQs) have generated great interest as solution‐processable inorganic polymers for obtaining high‐dielectric‐constant (k) dielectrics. Engineering the side chains in PSQs can enhance the polarization characteristics and provide different functionalities, such as photopatternability and ferroelectric performance. In this study, two types of UV curable high‐k PSQs are prepared by introducing epoxy‐containing side chains to the PSQs: 1) glycidyl epoxy‐containing linear groups and 2) bulky cycloaliphatic epoxy‐containing groups. The physical, chemical, and electrical properties of these two materials after UV curing are investigated. Both PSQ films show high dielectric strength and are successfully patterned after exposure to UV light. The structure of the side chains influences the UV curing behavior and capacitance characteristics of the PSQ dielectrics. These differences determine the driving behavior of the fabricated organic thin‐film transistors, which exhibits either stable or ferroelectric operation. Finally, logic gates and memory cells exhibiting low‐voltage and non‐destructive operations are successfully integrated using UV cured PSQs. This approach for engineering PSQs with the purpose of achieving desirable photopatternability and high dielectric or ferroelectric performance can be used to realize simple and inexpensive solution‐processing techniques for next generation integrated electronics. [ABSTRACT FROM AUTHOR]