Photopatternable High‐k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties (Adv. Funct. Mater. 19/2023).

Keywords: gate dielectrics; high dielectric constant; logic gates; low-voltage operation; memory device cells; polysilsesquioxanes EN gate dielectrics high dielectric constant logic gates low-voltage operation memory device cells polysilsesquioxanes 1 1 1 05/11/23 20230508 NES 230508 B Polysilsesquioxanes b In article number 2214865, Insik In, Yong Jin Jeong, Se Hyun Kim, and co-workers prepare two types of UV-curable high-dielectric-constant polysilsesquioxanes by introducing epoxy-containing side chains: 1) glycidyl epoxy-containing linear groups and 2) bulky cycloaliphatic epoxy-containing groups. The structure of the side chains influenced the UV curing behavior and capacitance characteristics of polysilsesquioxanes. Gate dielectrics, high dielectric constant, logic gates, low-voltage operation, memory device cells, polysilsesquioxanes. [Extracted from the article]