The effect of γ-ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device.

• Total ionizing dose effect on the voltage-controlled magnetic anisotropy Hall bar device based on HfZrO/CoFeB hybrid film. • Voltage-controlled magnetic anisotropy effect is enhanced with the accumulation of irradiation dosage. • The proposed mechanism focus on interfacial trapped charges. • HfZrO/CoFeB hybrid film possess potential for radiation-hard memory. We investigate the total ionizing dose (TID) effect on the voltage-controlled magnetic anisotropy (VCMA) Hall bar device based on HfZrO/CoFeB hybrid film. Devices under test are exposed to 1.17 MeV 60Co γ-ray at the dose rate of 50 rad(Si)/s. The Anomalous Hall measurement is performed at several certain irradiation dosages. The results show that the VCMA effect is enhanced with the accumulation of irradiation dosage. We propose a mechanism of interface trapped charges to explain this phenomenon. Thus, our work indicates that the magnetic tunneling junction based on HfZrO/CoFeB hybrid film is a promising building block for radiation-hard VCMA-MRAM (magneto-resistive random-access memory). [ABSTRACT FROM AUTHOR]