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Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations.
- Source :
-
Microelectronics Reliability . Jun2023, Vol. 145, pN.PAG-N.PAG. 1p. - Publication Year :
- 2023
-
Abstract
- To our knowledge, this is the first study to investigate the high-frequency (100–300 kHz) switching stability of SiC power devices at a Vds of 800 V during hard switching (HSW) and zero voltage switching (ZVS) operations. In this study, we proposed a topology for evaluating the switching dependencies (i.e., temperature, frequency, current, and duty cycle) in order to determine their flexibility in identifying circuit-level switching stability. We also evaluated the high-frequency switching stability of GaN power devices for comparison purposes. Overall, the results indicated that compared with GaN power devices, SiC power devices have higher dynamic drain-to-source on-resistance stability during ZVS and HSW high-frequency switching operations. • Investigate the high-frequency (100–300 kHz) switching stability of SiC power devices. • Propose a topology for evaluating the switching dependencies (i.e., temperature, frequency, current, and duty cycle). • Evaluate the high-frequency switching stability of GaN power devices for comparison purposes. • SiC power devices have higher dynamic drain-to-source on-resistance stability. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ZERO voltage switching
*DYNAMIC stability
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 145
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 163698046
- Full Text :
- https://doi.org/10.1016/j.microrel.2023.114983