Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations.

To our knowledge, this is the first study to investigate the high-frequency (100–300 kHz) switching stability of SiC power devices at a Vds of 800 V during hard switching (HSW) and zero voltage switching (ZVS) operations. In this study, we proposed a topology for evaluating the switching dependencies (i.e., temperature, frequency, current, and duty cycle) in order to determine their flexibility in identifying circuit-level switching stability. We also evaluated the high-frequency switching stability of GaN power devices for comparison purposes. Overall, the results indicated that compared with GaN power devices, SiC power devices have higher dynamic drain-to-source on-resistance stability during ZVS and HSW high-frequency switching operations. • Investigate the high-frequency (100–300 kHz) switching stability of SiC power devices. • Propose a topology for evaluating the switching dependencies (i.e., temperature, frequency, current, and duty cycle). • Evaluate the high-frequency switching stability of GaN power devices for comparison purposes. • SiC power devices have higher dynamic drain-to-source on-resistance stability. [ABSTRACT FROM AUTHOR]