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Design and Lifetime Estimation of Low-Power 6-Input Look-Up Table Used in Modern FPGA.

Authors :
Singh, Vivek Kumar
Nag, Abhishek
Bhattacharjee, Abhishek
Pradhan, Sambhu Nath
Source :
Journal of Circuits, Systems & Computers. 5/15/2023, Vol. 32 Issue 7, p1-19. 19p.
Publication Year :
2023

Abstract

Due to technological advancements and voltage scaling, leakage power has become an important concern in CMOS design. The implementation of a field-programmable gate array (FPGA) circuit utilizes a portion of the FPGA's resources as compared to an application-specific integrated circuit (ASIC). Both the utilized and unutilized parts of the FPGA dissipate leakage power. In this work, two dynamic power gating techniques, PSG-1 and PSG-2, are proposed, which are able to reduce the leakage power of the 6-input look-up table (LUT) used in the Xilinx Spartan-6 series. The obtained results show that the proposed approaches PSG-1 and PSG-2 reduce average leakage power by 54.61% and 66.69%, respectively, at the expense of nominal area and delay overhead. The proposed method is also capable of lowering the average total power of the 6-input LUT. The suggested PSG-1 and PSG-2 approaches reduce average power by 53.75% and 60.83%, respectively. However, header-based power supply gating is extremely vulnerable to the negative-bias temperature instability (NBTI) aging effect and, due to this, the lifetime of the circuit is reduced considerably. Therefore, in this work, lifetime estimation-based analysis is performed by varying the stress probability of the sleep transistor. The results show that the LUT with PSG-1 and PSG-2 techniques has a lifetime of 4.55 years and 11.13 years, respectively. The stress time of the sleep transistor is 50% for the PSG-1 technique and 25% for the PSG-2 technique, respectively. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02181266
Volume :
32
Issue :
7
Database :
Academic Search Index
Journal :
Journal of Circuits, Systems & Computers
Publication Type :
Academic Journal
Accession number :
163712152
Full Text :
https://doi.org/10.1142/S021812662350113X