Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method.

• Full-band phonon Monte Carlo simulation is conducted to study thermal spreading resistance in GaN HEMTs. • Different simulation approaches for simulation phonon transport in GaN HEMTs are thoroughly compared. • Incorporating first-principle-calculated phonon properties in device thermal simulations is essential. Accurate thermal simulation is essential for the near-junction thermal management and electro-thermal co-design of GaN HEMTs. While various methods have been employed to simulate phonon thermal transport in GaN, a comprehensive evaluation of their performance and reliability has yet to be conducted. In this work, first-principle-based steady-state full-band phonon tracing Monte Carlo (MC) simulations are conducted to study the thermal spreading resistance in GaN HEMTs. The results of full-band MC serve as a standard against which the applicability, accuracy, and computational efficiency of three widely-used approaches to simulate the near-junction phonon transport in GaN are thoroughly examined. The simulation techniques compared in this study include MC simulations with empirical isotropic phonon dispersion (isotropic MC), MC simulations with gray-medium approximation (gray MC), and finite-element methods (FEM) with effective thermal conductivities (FEM with k eff). It is found that isotropic MC largely overestimates the thermal resistance due to the empirical model's overestimation of phonon mean free path (MFP) distributions. By selecting an appropriate average MFP, gray MC can approximate the full-band results well, but due to its inability to reflect the contributions of different phonon modes, discrepancies are inevitable for some geometric parameters. For FEM-based analysis, although the diffusive nature of Fourier's law precludes the reproduction of channel temperature distributions, the influence of phonon ballistic effects on the junction temperature can be accurately reflected in the well-chosen effective thermal conductivities. The comparison highlights the importance of directly incorporating first-principles-calculated phonon properties into device thermal simulations, and the paper can provide a clearer understanding of near-junction thermal transport in GaN and can be useful for thermal simulations of GaN-based devices. [ABSTRACT FROM AUTHOR]