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Chalcogen bonding and variable charge transfer degree in two polymorphs of 1 : 1 conducting salts with segregated stacks.

Authors :
Beau, Maxime
Jeannin, Olivier
Fourmigué, Marc
Auban-Senzier, Pascale
Pasquier, Claude
Alemany, Pere
Canadell, Enric
Jeon, Ie-Rang
Source :
CrystEngComm. 6/7/2023, Vol. 25 Issue 21, p3189-3197. 9p.
Publication Year :
2023

Abstract

Harnessing a bis(selenomethyl)tetrathiafulvalene (TTF) derivative as a donor, conducting charge transfer (CT) salts are realized thanks to original packing structures supported by chalcogen bonding (ChB) interactions. Specifically, reaction of EDT-TTF(SeMe)2 (EDT = ethylenedithio) with an acceptor, 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F2TCNQ), afforded two polymorphs of 1 : 1 CT salts, α- and β-[EDT-TTF(SeMe)2](F2TCNQ). The donor and the acceptor molecules in both polymorphs organize into segregated and uniform stacks. Based on the structure, the α-salt shows a quasi-complete CT while the β-salt shows a partial CT with ρ ∼±0.8. The oxidation of TTF activates the σ-hole on Se atoms to be engaged in highly linear ChB interactions with the N atoms on F2TCNQ. The formation of directional ChB interactions resulted in original packing structures of the donor and the acceptor stacks that are distinct between α- and β-salts. In particular, the ChB motif observed in the β-salt allows F2TCNQ molecules within the stack to be closer than those in the α-salt. Consequently, the α-salt is a semi-conductor, while the β-salt shows metallic behaviour with a two-step metal-to-insulator (MI) transition. Moreover, the observed MI transition temperature in the β-salt (180 K) is substantially higher than that in other known CT salts, likely owing to the 3D coupling of the modulation in different chains brought about by the –SeMe substituents. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14668033
Volume :
25
Issue :
21
Database :
Academic Search Index
Journal :
CrystEngComm
Publication Type :
Academic Journal
Accession number :
163909321
Full Text :
https://doi.org/10.1039/d3ce00260h