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Ultrahigh Carrier Mobility in Two-Dimensional IV–VI Semiconductors for Photocatalytic Water Splitting.
- Source :
-
Molecules . May2023, Vol. 28 Issue 10, p4126. 10p. - Publication Year :
- 2023
-
Abstract
- Two-dimensional materials have been developed as novel photovoltaic and photocatalytic devices because of their excellent properties. In this work, four δ-IV–VI monolayers, GeS, GeSe, SiS and SiSe, are investigated as semiconductors with desirable bandgaps using the first-principles method. These δ-IV–VI monolayers exhibit exceptional toughness; in particular, the yield strength of the GeSe monolayer has no obvious deterioration at 30% strain. Interestingly, the GeSe monolayer also possesses ultrahigh electron mobility along the x direction of approximately 32,507 cm2·V−1·s−1, which is much higher than that of the other δ-IV–VI monolayers. Moreover, the calculated capacity for hydrogen evolution reaction of these δ-IV–VI monolayers further implies their potential for applications in photovoltaic and nano-devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14203049
- Volume :
- 28
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Molecules
- Publication Type :
- Academic Journal
- Accession number :
- 163986029
- Full Text :
- https://doi.org/10.3390/molecules28104126