Bandgap reference generator based on temperature-independent biasing.

Nowadays, the focus is developing whole Systems on a Chip (SoC) wherein: integrate the total electronic system functions, together with digital and analog circuits, on a single silicon die. Every day new products go out to the market offering less power consumption, reduced size, altogether with additional functions and capabilities. On one side, it is important to consider that CMOS technologies have played an important role in the development of the integrated applications. CMOS is the most cost-effective technology and seems to be the cheapest substitute for the foreseen future. A vital part of the design of analog integrated circuits is to build reference voltages and currents with precise values. To achieve this on-chip, so bandgap reference circuits are generally used. A classic application for reference voltages is analog-to-digital conversion. The purpose of the work is to design & implement a bandgap reference generator for converter applications. The project is implemented in 0.18µM CMOS technology. The focus of this project is to design a CMOS bandgap reference generator for converter applications. The proposed bandgap circuit is able to generate a reference voltage of 1.17V. The generated voltage is insensitive to temperature variations from -30°C to +80°C and power supply change (Due to noise produced on silicon). [ABSTRACT FROM AUTHOR]