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An improved parallel five-level reinjection CSC for self-commutation of thyristor converter.

Authors :
Song, Yumei
Hao, Jianzhang
Dong, Changhao
Guo, Xizheng
Wang, Li
Source :
Microelectronics International. 2023, Vol. 40 Issue 3, p174-186. 13p.
Publication Year :
2023

Abstract

Purpose: This paper aims to study a multi-level reinjection current source converter (MLR-CSC) that adds attracting properties such as the self-commutation and pulse multiplication to the thyristor converter, which is of great significance for increasing the device capacity and reducing current harmonics on the grid side. Particularly, designing advantageous driving methods of the reinjection circuit is a critical issue that impacts the harmonic reduction and operation reliability of the MLR-CSC. Design/methodology/approach: To deal with the mentioned issue, this paper takes the five-level reinjection current source converter (FLR-CSC), which is a type of the MLR-CSC, as the research object. Then, a method that can fully use combinations of five-level reinjection switching functions based on the concept of decomposition and recombination is proposed. It is worthy to mention that the proposed method can be easily extended to other multi-level reinjection circuits. Moreover, the working principle of the three-phase bridge circuit based on semi-controlled thyristors in the FLR-CSC that can achieve the four-quadrant power conversion is analyzed in detail. Findings: Finally, the simulation and experimental results of FLR-CSC verify the effectiveness of the proposed reinjection circuit driving method and the operating principle of four-quadrant power conversion in this paper. Originality/value: The outstanding features of the proposed driving method for FLR-CSC in this paper include combinations of reinjection switching functions that are fully exploited through three simple steps and can be conveniently extended to other multi-level reinjection circuits. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*THYRISTORS
*BRIDGE circuits

Details

Language :
English
ISSN :
13565362
Volume :
40
Issue :
3
Database :
Academic Search Index
Journal :
Microelectronics International
Publication Type :
Academic Journal
Accession number :
164083629
Full Text :
https://doi.org/10.1108/MI-05-2022-0093