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The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor.
- Source :
-
Applied Physics Letters . 6/5/2023, Vol. 122 Issue 23, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- In this Letter, the role of background carbon in metalorganic chemical vapor deposition (MOCVD) β-Ga2O3 growth using trimethylgallium (TMGa) as the Ga precursor was investigated. The quantitative C and H incorporations in MOCVD β-Ga2O3 thin films grown at different growth rates and temperatures were measured via quantitative secondary ion mass spectroscopy (SIMS). The SIMS results revealed both [C] and [H] increase as the TMGa molar flow rate/growth rate increases or growth temperature decreases. The intentional Si incorporation in MOCVD β-Ga2O3 thin films decreases as the growth rate increases or the growth temperature decreases. For films grown at relatively fast growth rates (GRs) (TMGa > 58 μmol/min, GR > 2.8 μm/h) or relatively low temperature (<950 °C), the [C] increases faster than that of the [H]. The experimental results from this study demonstrate the previously predicted theory—H can effectively passivate the compensation effect of C in n-type β-Ga2O3. The extracted net doping concentration from quantitative SIMS {[Si]-([C]-[H])} agrees well with the free carrier concentration measured from Hall measurement. The revealing of the role of C compensation in MOCVD β-Ga2O3 and the effect of H incorporation will provide guidance on designing material synthesis for targeted device applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 164244584
- Full Text :
- https://doi.org/10.1063/5.0153626