Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023).

B GaN Nanoscale Air Channel Diodes b In article number 2206385 by Mo Li and co-workers, a vertical GaN nanodiode with a 50 nm air channel is reported, fabricated using IC-compatible technologies, with a record field emission current of 11 mA@10 V. Notably, the device displays outstanding stability and fast switching characteristics with a sub-10 ns response time. Additionally, the temperature-dependent performance can guide the design of nano-air-channel-devices for applications in extreme conditions. Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer-Scale Fabrication (Adv. Sci. 17/2023). [Extracted from the article]