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Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells.
- Source :
-
Journal of Applied Physics . 6/28/2023, Vol. 133 Issue 24, p1-10. 10p. - Publication Year :
- 2023
-
Abstract
- GaSb grown on GaAs through interfacial misfit (IMF) arrays grown via molecular beam epitaxy has been heavily studied; there is limited research, however, on IMF growth through metal-organic vapor phase epitaxy. To demonstrate viability for integration in a multijunction solar cell for terrestrial use, it is imperative to demonstrate high quality GaSb grown on GaAs through metal-organic vapor phase epitaxy. The preferred gallium precursors for n-type and p-type GaSb for longest minority carrier diffusion length were determined to be trimethylgallium and triethylgallium, respectively. A heteroepitaxial GaSb-on-GaAs device attained an open-circuit voltage of 190 mV and an efficiency of 2.2%. Extracted threading dislocation density from the minority carrier lifetime for the heteroepitaxial GaSb-on-GaAs device was determined to be 7.5 × 10 6 cm − 2 . In a modeled multijunction solar cell, this device attributes to an overall efficiency of 33.1% under AM1.5g illumination. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 133
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 164666014
- Full Text :
- https://doi.org/10.1063/5.0141163