Cite
Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films.
MLA
Puurunen, Riikka L., et al. “Hafnium Oxide Films by Atomic Layer Deposition for High-κ Gate Dielectric Applications: Analysis of the Density of Nanometer-Thin Films.” Applied Physics Letters, vol. 86, no. 7, Feb. 2005, p. 073116. EBSCOhost, https://doi.org/10.1063/1.1866219.
APA
Puurunen, R. L., Delabie, A., Van Elshocht, S., Caymax, M., Green, M. L., Brijs, B., Richard, O., Bender, H., Conard, T., Hoflijk, I., Vandervorst, W., Hellin, D., Vanhaeren, D., Zhao, C., De Gendt, S., & Heyns, M. (2005). Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films. Applied Physics Letters, 86(7), 073116. https://doi.org/10.1063/1.1866219
Chicago
Puurunen, Riikka L., Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, et al. 2005. “Hafnium Oxide Films by Atomic Layer Deposition for High-κ Gate Dielectric Applications: Analysis of the Density of Nanometer-Thin Films.” Applied Physics Letters 86 (7): 073116. doi:10.1063/1.1866219.