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Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma.
- Source :
-
Journal of Materials Science Letters . Jul2003, Vol. 22 Issue 13, p939-940. 2p. - Publication Year :
- 2003
-
Abstract
- Examines the low temperature growth of homoepitaxial layer on silicon substrate. Use of low temperature in-situ cleaning to reduce the interfacial contaminants; Oxygen concentration at the interface; Measurement of the thickness of the silicon epitaxial layers.
Details
- Language :
- English
- ISSN :
- 02618028
- Volume :
- 22
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Journal of Materials Science Letters
- Publication Type :
- Academic Journal
- Accession number :
- 16693523
- Full Text :
- https://doi.org/10.1023/A:1024623804920