Formation of the CuPt-type ordered structure in CdxZn1 - xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate.

The article reports that three basic forms of ordering, i.e., CuAu, chalcopyrite, and CuPt, have been reported widely in various III-V ternary semiconductors grown by molecular beam epitaxy and organometallic vapor phase epitaxy. Ordering was reported to reduce the energy band gap of a III-V alloy with respect to that for the disordered alloy. Relatively little work has been done on II-VI/III-V mixed heterostructures probably due to possible cross-doping effects resulting from inter-diffusion or due to strain effects as a consequence of the lattice mismatch between II-VI active layers and the III-V substrates.