Electrical Resistance of W/Si–Ge (0–75 wt % Ge) Contacts.

The electrical resistance of the contact between tungsten and silicon–germanium alloys of different compositions was measured as a function of temperature. The results indicate that the room-temperature contact resistance increases with increasing Ge content, annealing temperature, and annealing time. With increasing measuring temperature, the contact resistance drops to a level of the experimental error. Annealing at 1070 K tends to break down both W/p-Si–Ge and W/n-Si–Ge contacts. [ABSTRACT FROM AUTHOR]