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Modeling the conduction mechanisms of intrinsic multi-level states in HfOx-based resistive random access memory.

Authors :
Cheng, Shenghua
Wang, Xiaohu
Zhang, Hao
Liu, Yongbo
Shen, Tingying
Li, Xinyi
Gao, Bin
Qian, He
Source :
Applied Physics Letters. 7/24/2023, Vol. 123 Issue 4, p1-6. 6p.
Publication Year :
2023

Abstract

Multi-level cell storage technology based on resistive random access memory (RRAM) with multi-level state characteristics is more attractive in achieving low-cost ultra-high-density nonvolatile memory. Although a large number of literatures have reported the multi-level state characteristics of RRAM, so far there is no unified model that can well explain the intrinsic reasons for the existence of intermediate resistance state (IRS) and the switching mechanism between different resistance states. Multi-level state characteristics are observed by I–V characteristic measurements on RRAM with TiN/HfOx/barrier layer/TiN stacks fabricated using a commercialized 28 nm CMOS process. Compared to other published resistive switching models, the proposed model based on trap-assisted tunneling is more consistent with the measured. The model can reproduce the multi-level state characteristics based on the mechanism that interaction between defects and oxygen vacancies at the interface of HfOx and TiN electrode, resulting in the formation of multiple weak conductive filaments. Furthermore, the wide spread of high resistance state (HRS) and the switching between HRS and IRS are determined by the distance of tunneling gap. As HfOx-based RRAM will soon be commercialized, it is becoming very urgent to clarify the switching mechanisms of multi-level state characteristics and propose a universal model. Consequently, this work satisfied the current demand and significantly advanced the understanding and development of commercialized, cost-effective, high-density multi-bit HfOx-based RRAM technology. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
123
Issue :
4
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
168584103
Full Text :
https://doi.org/10.1063/5.0160109