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Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO 2 Metal-Ferroelectric-Metal Memory.
- Source :
-
Nanomaterials (2079-4991) . Jul2023, Vol. 13 Issue 14, p2104. 9p. - Publication Year :
- 2023
-
Abstract
- In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory. [ABSTRACT FROM AUTHOR]
- Subjects :
- *VOLTAGE
*HIGH voltages
*ELECTRIC breakdown
*YTTRIUM
Subjects
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 13
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Nanomaterials (2079-4991)
- Publication Type :
- Academic Journal
- Accession number :
- 169332816
- Full Text :
- https://doi.org/10.3390/nano13142104