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Effect of Fe dopant on oxygen vacancy variation and enhanced photocatalysis hydrogen production of LaMnO3 perovskite nanofibers.

Authors :
Zhan, Meiling
Fang, Minghao
Li, Liangyu
Zhao, Yajing
Yang, Bozhi
Min, Xin
Du, Pengpeng
Liu, Yan'gai
Wu, Xiaowen
Huang, Zhaohui
Source :
Materials Science in Semiconductor Processing. Nov2023, Vol. 166, pN.PAG-N.PAG. 1p.
Publication Year :
2023

Abstract

In the pursuit of enhancing the property of photocatalytic hydrogen production, strategies for enhancing light absorption and the separation and transport efficiency of photo-induced carriers have been studied. Perovskite photocatalyst has great application potential in the field of photocatalytic hydrogen production due to its special crystal structure. LaMn (1-x) Fe x O 3 (x = 0–0.08) perovskite nanofibers with diameters of 50–200 nm were synthesized by electrospinning, and their photochemical properties were investigated. The results of UV–Vis diffuse reflectance spectroscopy, PL spectroscopy, I-t, and EIS revealed that the doping with Fe could improve light absorption and reduce the recombination rate of photogenerated electron-hole pairs, and improve the separation and transfer efficiency of photogenerated electron-hole pairs, likely due to the increased concentration of oxygen vacancies caused by doping. Through optimization of the Fe doping amount, an improved hydrogen production efficiency of 767.71 μmol h−1 g−1 was achieved for LaMn 0·96 Fe 0·04 O 3 , which is 2.5 times the efficiency of undoped LaMnO 3 (300.74 μmol h−1 g−1). These results provide a new idea for the development of efficient photocatalysts for hydrogen production. • LaMnO3 nanofibers with various Fe-doping ratios were prepared by electrospinning. • Fe doping can adjust the crystal structure; change the oxygen vacancy concentration. • The prepared LaMn (1-x) Fe x O 3 nanofibers exhibited good photocatalytic activity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13698001
Volume :
166
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
169753251
Full Text :
https://doi.org/10.1016/j.mssp.2023.107697