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Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Aug2023, Vol. 220 Issue 16, p1-5. 5p. - Publication Year :
- 2023
-
Abstract
- AlN‐based field‐effect transistors (FETs) enable high‐breakdown voltage, high drain current, and high‐temperature operation. To realize high‐frequency devices, N‐polar AlGaN/AlN heterostructure FETs are focused on. N‐polar Al0.1Ga0.9N/Al0.9Ga0.1N/AlN FET is fabricated using metal–organic vapor‐phase epitaxy, and its electrical characteristics are evaluated. An N‐polar AlN layer is grown on a sapphire substrate with a misorientation angle of 2.0° toward m‐axis, on which a 20 nm thick Al0.9Ga0.1N base layer and a 20 nm Al0.1Ga0.9N channel layer are grown. The static FET operation is confirmed to exhibit an n‐channel and pinch‐off. Normally, during operation with a turn‐on voltage of −3.2 V, a high operating breakdown voltage of 620 V and high operating temperature of 280 °C are also confirmed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 220
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 170027001
- Full Text :
- https://doi.org/10.1002/pssa.202200871