Analysis of stressed-gate SiO2 films with electron injection by conductive atomic force microscopy<FNR></FNR><FN>This paper was recommended by the Silicon Materials and Device Research Committee. </FN>.

We developed a technique to directly observe at nanoscale resolution the degradation of gate SiO2 films observed in metal-oxide-semiconductor (MOS) capacitors by using conductive atomic force microscopy (C-AFM). As a result of observing gate SiO2 films subjected to a constant current stress, local leakage current spots related to the stress-induced leakage current (SILC) were detected. Distribution of defects induced by the electrical stress and the conduction mechanism of local leakage current caused by them are discussed. © 2005 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 88(6): 18–26, 2005; Published online in Wiley InterScience (<URL>www.interscience.wiley.com</URL>). DOI 10.1002/ecjb.20123 [ABSTRACT FROM AUTHOR]