Interaction of defects and H in proton-irradiated GaN(Mg, H).

Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 °C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H. [ABSTRACT FROM AUTHOR]