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Interaction of defects and H in proton-irradiated GaN(Mg, H).
- Source :
-
Journal of Applied Physics . 5/1/2005, Vol. 97 Issue 9, p093517. 6p. 9 Graphs. - Publication Year :
- 2005
-
Abstract
- Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 °C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 97
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 17068230
- Full Text :
- https://doi.org/10.1063/1.1883309