Effects of annealing conditions on structural and ferroelectric properties of CeO2-HfO2 solid solution thin films on InAs substrates fabricated by chemical solution deposition.

CeO 2 -HfO 2 solid solution thin films are fabricated on (100) InAs substrates by chemical solution deposition (CSD) method. The effects of annealing conditions (annealing temperature and atmosphere) on the structural and ferroelectric properties of CeO 2 -HfO 2 solid solution thin films are studied. The results verified that ferroelectric phase of CeO 2 -HfO 2 solid solution thin film could be induced on InAs substrate. In the temperature range studied (550 – 700 ºC), higher annealing temperature profits suppressing nonferroelectric monoclinic phase and promoting ferroelectric orthorhombic phase, and therefore improves ferroelectric polarization. For film annealed at 700 ºC, annealing in N 2 leads to an enhanced ferroelectric polarization (2 P r of 33.9 μC/cm2) compared with annealing in O 2. Importantly, all films can survive 1 × 108 cycles at an applied voltage of 20 V, and do not show significant retention losses, which are benificial for further application. This work highlights the feasibility of integrating CeO 2 -HfO 2 ferroelectric thin films on III-V platform technology. [Display omitted] • Ferroelectric CeO 2 -HfO 2 solid solution thin films are fabricated on InAs substrates by chemical solution deposition method. • Annealing temperature and atmosphere affect the ferroelectric polarizations of the CeO 2 -HfO 2 solid solution thin films. • CeO 2 -HfO 2 ferroelectric thin films on InAs exhibit superior reliability (fatigue and retention). [ABSTRACT FROM AUTHOR]