Emitter structure design of near-infrared quantum dot light-emitting devices.

We consider how the device structure and the emitter properties determine the performance of near-infrared quantum dot based light-emitting diodes. The challenges and future prospects for such bright, stable and efficient devices are discussed. [Display omitted] Near-infrared (NIR) emitters are indispensable for telecommunication and medical applications. Colloidal semiconductor quantum dots offer plenty of advantages for NIR light-emitting diodes (LEDs) thanks to their size-dependent emission, high exciton binding energy, and low-cost solution processing. Here, we summarize the recent progress in the development of NIR quantum dot LEDs, focusing on how their device structure and emitter properties facilitate improvement of device performance. The challenges and opportunities associated with NIR quantum dot LEDs such as achieving the proper balance between the charge transport and exciton formation, enhancement of device stability, and improvement of device outcoupling efficiency are discussed. [ABSTRACT FROM AUTHOR]