InGaP/GaAs HBT power amplifier with CMRC structure.

Authors :: Poek, C. K.
Yan, B. P.
Yang, E. S.
Source :: Microwave & Optical Technology Letters. 7/5/2005, Vol. 46 Issue 1, p84-88. 5p. 3 Diagrams, 8 Graphs.
Publication Year :: 2005
Abstract: An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band-1-power class-2 application. The HBT power amplifier demonstrates maximum output power Pout of 29.4 dBm and power-added efficiency (PAE) of 48% at a frequency of 1.95 GHz. When operated according to the WCDMA standard, it achieves Pout of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IM3 performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 84–88, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20908 [ABSTRACT FROM AUTHOR]