Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation.

MLA

Mazumder, Aishani, et al. “Long Duration Persistent Photocurrent in 3 Nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation.” Advanced Functional Materials, vol. 33, no. 36, Sept. 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1002/adfm.202303641.

APA

Mazumder, A., Nguyen, C. K., Aung, T., Low, M. X., Rahman, M. A., Russo, S. P., Tawfik, S. A., Wang, S., Bullock, J., Krishnamurthi, V., Syed, N., Ranjan, A., Zavabeti, A., Abidi, I. H., Guo, X., Li, Y., Ahmed, T., Daeneke, T., Al, H. A., & Balendhran, S. (2023). Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation. Advanced Functional Materials, 33(36), 1–8. https://doi.org/10.1002/adfm.202303641

Chicago

Mazumder, Aishani, Chung Kim Nguyen, Thiha Aung, Mei Xian Low, Md. Ataur Rahman, Salvy P. Russo, Sherif Abdulkader Tawfik, et al. 2023. “Long Duration Persistent Photocurrent in 3 Nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation.” Advanced Functional Materials 33 (36): 1–8. doi:10.1002/adfm.202303641.