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Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric.
- Source :
-
Applied Physics Letters . 9/4/2023, Vol. 123 Issue 10, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the DC regime, current originates from Poole–Frenkel conduction (PFC) in forward bias at high-temperature, while (ii) at low temperature the conduction is dominated by Fowler–Nordheim tunneling. Furthermore, (iii) we modeled the gate current transient during a constant gate stress as effect of electron trapping in deep levels located in the oxide that inhibits the PF conduction mechanism. This hypothesis was supported by a TCAD model that accurately reproduces the experimental results. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 171839787
- Full Text :
- https://doi.org/10.1063/5.0154878