Effects of thermal annealing on the band gap of GaInAsSb.

In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm-thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520 °C, whereas for MQW structures the maximum shift was 61 meV. [ABSTRACT FROM AUTHOR]