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ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY.
- Source :
-
International Journal of High Speed Electronics & Systems . Sep2004, Vol. 14 Issue 3, p28-33. 6p. - Publication Year :
- 2004
-
Abstract
- A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5 § ←5 m. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01291564
- Volume :
- 14
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- International Journal of High Speed Electronics & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 17225044
- Full Text :
- https://doi.org/10.1142/S0129156404002624