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Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes.
- Source :
-
Applied Physics Letters . 9/25/2023, Vol. 123 Issue 13, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- The non-planar growth of UV-A laser diode heterostructures composed of AlGaN layers with high Al-mole-fractions and thicknesses exceeding the critical layer thickness was performed on patterned c-plane GaN (0001) substrates with stripe-shaped mesa structures. This approach suppressed the surface cracking at the top of the mesas via an anisotropic relaxation of the in-plane strain along the direction normal to the mesa stripes. Stimulated emission and laser operation at room temperature with emission in the UV-A range under pulsed current injection were demonstrated for laser diodes fabricated on the mesas. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 172450267
- Full Text :
- https://doi.org/10.1063/5.0159684