Back to Search
Start Over
7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.
- Source :
-
Applied Physics Letters . 10/2/2023, Vol. 123 Issue 14, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm 2 and a Baliga figure of merit of 22 GW/ cm 2 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 172853514
- Full Text :
- https://doi.org/10.1063/5.0164119