Cite
Ga doping induced thermal stabilization of fcc phase in Ge2Sb2Te5 thin films: A step toward power-efficient phase change memories.
MLA
Bala, Neeru, et al. “Ga Doping Induced Thermal Stabilization of Fcc Phase in Ge2Sb2Te5 Thin Films: A Step toward Power-Efficient Phase Change Memories.” Journal of Applied Physics, vol. 134, no. 13, Oct. 2023, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0167336.
APA
Bala, N., Goutam, U. K., & Thakur, A. (2023). Ga doping induced thermal stabilization of fcc phase in Ge2Sb2Te5 thin films: A step toward power-efficient phase change memories. Journal of Applied Physics, 134(13), 1–7. https://doi.org/10.1063/5.0167336
Chicago
Bala, Neeru, U. K. Goutam, and Anup Thakur. 2023. “Ga Doping Induced Thermal Stabilization of Fcc Phase in Ge2Sb2Te5 Thin Films: A Step toward Power-Efficient Phase Change Memories.” Journal of Applied Physics 134 (13): 1–7. doi:10.1063/5.0167336.