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Mitigating Exciton Recombination Losses in Organic Solar Cells by Engineering Nonfullerene Molecular Crystallization Behavior.

Authors :
Zhang, Huarui
Ran, Guangliu
Cui, Xinyue
Liu, Yuqiang
Yin, Zhe
Li, Dawei
Ma, Xueqing
Liu, Wenlong
Lu, Hao
Liu, Rui
Cai, Lei
Zhang, Wenkai
Guo, Siru
Li, Hongxiang
Yu, Jifa
Lin, Yi
Liu, Yahui
Lu, Guanghao
Ma, Zaifei
Cheng, Pei
Source :
Advanced Energy Materials. 10/13/2023, Vol. 13 Issue 38, p1-10. 10p.
Publication Year :
2023

Abstract

Although the advances in organic solar cells (OSCs) have been considerable, their efficiency is still limited by recombination losses. Photogenerated electrons and holes are generally bound as localized excitons in organic semiconductors. The transition from excitons into free charges requires diffusion and dissociation processes, in which parasitic recombination losses exist. Reducing these losses is necessary for highly efficient OSCs. The crystallization behavior of the active layers can influence the efficiency of exciton diffusion and dissociation. In this work, different additives are delicately designed to control the crystallization behavior. It is found that the crystallization quality of active layers can be improved by controlling the aggregation of nonfullerene acceptors. The π–π stacking of blend films becomes compact, meanwhile, the crystallization in the vertical direction is more uniform. These are beneficial to the diffusion and dissociation of excitons. As a consequence, recombination losses are reduced and power convention efficiencies (PCEs) are improved significantly. Meanwhile, the general applicability of the additive is demonstrated in various organic photovoltaic systems, in which a PCE of 19.3% is achieved in D18:BTP‐eC9‐4F OSCs. This work provides a facile strategy to reduce the recombination losses of excitons for efficient devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
16146832
Volume :
13
Issue :
38
Database :
Academic Search Index
Journal :
Advanced Energy Materials
Publication Type :
Academic Journal
Accession number :
172991086
Full Text :
https://doi.org/10.1002/aenm.202302063