Cite
High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies.
MLA
von Bardeleben, H. J., et al. “High Temperature Annealing of N-Type Bulk β-Ga2O3: Electrical Compensation and Defect Analysis—The Role of Gallium Vacancies.” Journal of Applied Physics, vol. 134, no. 16, Oct. 2023, pp. 1–9. EBSCOhost, https://doi.org/10.1063/5.0173581.
APA
von Bardeleben, H. J., He, G., Wu, Y., & Ding, S. (2023). High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies. Journal of Applied Physics, 134(16), 1–9. https://doi.org/10.1063/5.0173581
Chicago
von Bardeleben, H. J., Gaohang He, Ying Wu, and Sunan Ding. 2023. “High Temperature Annealing of N-Type Bulk β-Ga2O3: Electrical Compensation and Defect Analysis—The Role of Gallium Vacancies.” Journal of Applied Physics 134 (16): 1–9. doi:10.1063/5.0173581.