Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness.

MLA

Benato, Andrea, et al. “Scaling of E-Mode Power GaN-HEMTs for Low Voltage/Low Ron Applications: Implications on Robustness.” Microelectronics Reliability, vol. 150, Nov. 2023, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.microrel.2023.115133.

APA

Benato, A., De Santi, C., Borga, M., Bakeroot, B., Filipek, I. K., Posthuma, N., Decoutere, S., Meneghesso, G., Zanoni, E., & Meneghini, M. (2023). Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness. Microelectronics Reliability, 150, N.PAG. https://doi.org/10.1016/j.microrel.2023.115133

Chicago

Benato, Andrea, Carlo De Santi, Matteo Borga, Benoit Bakeroot, Izabela Kuzma Filipek, Niels Posthuma, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini. 2023. “Scaling of E-Mode Power GaN-HEMTs for Low Voltage/Low Ron Applications: Implications on Robustness.” Microelectronics Reliability 150 (November): N.PAG. doi:10.1016/j.microrel.2023.115133.