An exploration of lattice transformation mechanism of muscovite single crystal under EB irradiation at 0–1000 kGy.

Electronic components made by inorganics (e.g., mica) play key roles in the function exertion of instruments working in outer‐layer space, enduring long‐term β‐ray irradiation. Its damage is vital while explored rarely. Herein, pure muscovite crystals were chosen and irradiated by an electron beam (EB) in air with a dose up to 1000 kGy. Then, micro‐geometry morphology variation in Z‐axis and microstructural transformation mechanism were explored by X‐ray diffraction, Fourier transform attenuated total reflection infrared spectrum, thermogravimetric analysis, X‐ray photoelectron spectroscopy, and CA analysis. Main results reveal that muscovite lattice is unstable to EB irradiation. With dose increases to 1000 kGy, interlayer space d of (0 0 2) lattice varied 2% near 0.2 Å. At low‐dose, irradiation lattice expansion readily occurs, whereas at higher dose, it is lattice shrinkage, showing a transformation from expansion to shrinkage. Concurrently, chemical structure varied, H2O amount increased, and metal element valance and surface wettability were reduced, so dehydroxylation occurred exceeding H2O radiolysis and evaporation, and framework cleavage could be severe. Binding energies of metals of 1000 kGy‐irradiated species decreased by 0.2 eV, and CA of 100 kGy‐irradiated species increased by 10°. Intrinsic mechanisms involve framework destruction, H‐atom migration, hydrogen bond formation/destruction, and H2O radiolysis. At low‐dose irradiation, H‐atom migration and hydrogen bond formation/destruction are predominant, inducing lattice expansion; at higher dose, framework cleavage is intensive and crucial, inducing shrinkage. During which, partial H2O occurred radiolysis, reducing valence. Generally, H‐atom migration and interface cleavage played key roles in microgeometry morphology a variation of muscovite crystal under EB irradiation at 0–1000 kGy. To enhance muscovite geometry‐morphology stability under a long‐term β‐ray irradiation condition, OH and hydrogen bond contents should be reduced and interface region should be strengthened (e.g., lessening vacancies or compacting stacking). This conclusion promotes the design of radiation‐resistant silicate material, guiding the manufacturing of electronic component used in aerospace industry significantly. [ABSTRACT FROM AUTHOR]