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Application of displacement damage dose approach to low-energy proton irradiated GaInP/GaAs/Ge solar cells.
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Dec2023, Vol. 545, pN.PAG-N.PAG. 1p. - Publication Year :
- 2023
-
Abstract
- In this paper, a displacement damage simulation model for proton-irradiated GaInP/GaAs/Ge triple junction (TJ) solar cells is constructed in Geant4, and the problem of the displacement damage dose curve deviation for low-energy protons is analyzed. The modeling results show that energy loss effects and local displacement damage are important factors for the deviation of the displacement damage dose curve. The non-ionizing energy loss (NIEL) values of GaAs sub-cells calculated by Geant4 can effectively improve the deviation of the curve caused by energy loss effects. The NIEL should be constrained by the structure and size of the device rather than just the proton energy and material type. In addition, the isotropic radiation field numerical method proposed in this paper allows the displacement damage simulation model constructed in Geant4 to be expediently applied to the radiation environment in space. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SOLAR cells
*AUDITING standards
*GALLIUM arsenide
*PROTONS
*ENERGY dissipation
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 545
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 173520964
- Full Text :
- https://doi.org/10.1016/j.nimb.2023.165144