Cite
Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons.
MLA
Jemmali, W. Q., et al. “Influence of Bi and N Contents and Dot Radius on Optoelectronic and Diamagnetic Properties of GaNAsBi Strained Quantum Dot Excitons.” Materials Science in Semiconductor Processing, vol. 169, Jan. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mssp.2023.107903.
APA
Jemmali, W. Q., Habchi, M. M., & Rebey, A. (2024). Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons. Materials Science in Semiconductor Processing, 169, N.PAG. https://doi.org/10.1016/j.mssp.2023.107903
Chicago
Jemmali, W.Q., M.M. Habchi, and A. Rebey. 2024. “Influence of Bi and N Contents and Dot Radius on Optoelectronic and Diamagnetic Properties of GaNAsBi Strained Quantum Dot Excitons.” Materials Science in Semiconductor Processing 169 (January): N.PAG. doi:10.1016/j.mssp.2023.107903.