Optimizing CNTFET design parameters using the Taguchi method for high-performance and low-power applications.

The features of Nanotube Carbon (CNT) are fascinating to study due to their unique structural and electrical capabilities. The small structure of CNT in Field-Effect Transistor technology can produce a smaller device with a better performance. This work implemented the Taguchi method to optimize the Carbon Nanotube Field-Effect Transistor (CNTFET). The Minitab 19 software was used to carry out the Taguchi method analysis. Three design parameters (CNT’s diameter, pitch, and the number of CNT) with three sizes were chosen to improve the CNTFET capabilities. L27 orthogonal array and signal-to-noise (SNR) were used to collect and analyze the data. The result from the Taguchi method was validated using ANOVA. The analysis results displayed the best combination of the three design parameters that produced the optimum performance in terms of high-power and low-power application. The most dominant design parameter that affected the CNTFET’s current characteristics was the CNT diameter with 59.93%, 96.15% and 99.14% towards on-current (Ion), off-current (Ioff) and current ratio (Ion/Ioff), respectively. The device can be further optimized by identifying the most dominant structure in CNTFET. Eventually, the CNTFET devices can be enhanced in terms of high-power and low-power applications. [ABSTRACT FROM AUTHOR]