Comparison of V-I characteristics between MOSFET and CNTFET by varying the carbon nanotube length.

The project aims to improve the drain characteristics of a novel CNTFET (carbon nanotube field effect transistor) by varying the carbon nanotube length. The CNTFET and MOSFET was chosen as a group having 20 samples each respectively. The drain characteristics were simulated by varying the carbon nanotube length of a CNTFET and channel length of a MOSFET by using the DFT tool. Reducing the channel length in an innovative method will lead to reducing the size of the device. The Independent T test was done which reveals that the CNTFET (P=0.152) was found to be statistically insignificant compared with MOSFET. The analysis we found that CNTFET(mean - 0.00007692) has better drain characteristics compared to MOSFET (mean -0.00002249). [ABSTRACT FROM AUTHOR]