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Static bending and forced vibration analyses of a piezoelectric semiconductor cylindrical shell within first-order shear deformation theory.
- Source :
-
Applied Mathematical Modelling . Feb2024, Vol. 126, p625-645. 21p. - Publication Year :
- 2024
-
Abstract
- • A novel piezoelectric semiconductor cylindrical shell is proposed. • The principle of virtual work is applied for the governing equations. • 2D behaviors in static bending and forced vibration are considered. • Mechanical displacements and electric potentials are sensitive to the doping level. • New structure and analytical solutions are helpful for sensing and energy harvesting. This paper examines the mechanically induced electric potential and charge redistribution in a piezoelectric semiconductor cylindrical shell employing first-order shear deformation theory. The two-dimensional governing equations and corresponding boundary conditions are simultaneously derived through a principle of virtual work method and the fundamental lemma of the calculus of variation. For the application of electronic devices, static bending and forced vibration analyses of an open cylindrical shell under locally distributed normal forces are analytically solved with the derived theoretical model. The effects of doping level on electric potentials and mechanical displacements are presented. An interesting result shows that doping levels can alter the peak position of the zeroth-order electric potential. In addition, the first three order natural frequencies of the shell under time-harmonic load are identified, and the doping level is found to have an inhibiting effect on the first natural frequency. All the numerical results are beneficial for optimizing the design and performance of cylindrical shell-shaped sensors and energy harvesters. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0307904X
- Volume :
- 126
- Database :
- Academic Search Index
- Journal :
- Applied Mathematical Modelling
- Publication Type :
- Academic Journal
- Accession number :
- 174104132
- Full Text :
- https://doi.org/10.1016/j.apm.2023.11.004