Calorimetric studies of yttrium doped non-conventional phase-change materials for improved performance.

Though phase-change materials (PCMs) are regarded as constituent part of next-generation phase-change memory and other unfolding optoelectronic applications, the kinetics study of glass transition and crystallization, significant property in switching remains obscure in high-temperature region. Hence, this paper reports the investigation of glass transition and crystallization kinetics of Te (1-x) (GeSe 0.5)Y x (TGSY) chalcogenide glass using differential scanning calorimetry (DSC) at heating rates 5, 10, 15, 20 °C/min. The effect of increasing Y quantity has been described by connecting structural relaxation kinematics during glass transition phenomena and devitrification while crystallization in chalcogenide glasses with their varied physicochemical characteristics. The inclusion of Y causes a discernible rise in the crystallization rate. The system is compatible with a strong glass-forming liquid, according to the Te (1-x) (GeSe 0.5) Y x material fragility index. According to the average values of the kinetic exponent factors, there is heterogeneous nucleation for the investigated composition, which is subsequently followed by a two- or three-dimensional crystal growth phenomenon. Different glass stability criteria have been discussed based on the relationship between the characteristic temperatures. The C ZW and C LX criteria were found to be inappropriate for discussing glass stability (GS) for the studied compositions based on the heating rate and composition dependencies of all criteria. The C YL criteria of Yuan et al. is the finest and it demonstrates the optimal ability for evaluating the GS, according to the data that was extracted from several GS criteria and their relative change parameters. By adding Y, thermal stability parameter and enthalpy emitted during the transition of glass and crystalline phases have been found to have an inverse relationship. All studied properties can conclude the application of studied material in phase-change material devices. [ABSTRACT FROM AUTHOR]