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Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD.
- Source :
-
Applied Physics Letters . 12/25/2023, Vol. 123 Issue 26, p1-7. 7p. - Publication Year :
- 2023
-
Abstract
- We report room temperature (RT) continuous-wave (CW) lasing of quantum well (QW) lasers grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including conventional compressively strained InGaAs/GaAs QWs and strain-compensated InGaAs/GaAs/GaAsP QWs, were investigated. Photoluminescence properties and device performance of both structures on native GaAs and (001) Si substrates are discussed. By adding GaAsP barriers to the InGaAs/GaAs QWs, the lowest threshold current density of ridge waveguide edge-emitting QW lasers obtained on Si is 550 A/cm2, measured on a 10 μm × 2 mm device at RT. The working temperature of the InGaAs/GaAs/GaAsP QW lasers grown on Si can be over 95 °C in the CW mode. This work suggests a feasible approach to improve the 980 nm laser performance on Si for monolithic optoelectronic integration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 174524239
- Full Text :
- https://doi.org/10.1063/5.0179895