Cite
Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors.
MLA
Wang, Yingjie, et al. “Polarization Enhanced Two-Dimensional Hole Gas in III-Nitride Heterostructures for Cryogenically Operated GaN-Based p-Channel Field Effect Transistors.” Applied Physics Letters, vol. 123, no. 26, Dec. 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0171505.
APA
Wang, Y., Huang, S., Jiang, Q., Wang, X., Ji, Z., Fan, J., Yin, H., Wei, K., Liu, X., Sun, Q., & Chen, K. J. (2023). Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors. Applied Physics Letters, 123(26), 1–8. https://doi.org/10.1063/5.0171505
Chicago
Wang, Yingjie, Sen Huang, Qimeng Jiang, Xinhua Wang, Zhongchen Ji, Jie Fan, Haibo Yin, et al. 2023. “Polarization Enhanced Two-Dimensional Hole Gas in III-Nitride Heterostructures for Cryogenically Operated GaN-Based p-Channel Field Effect Transistors.” Applied Physics Letters 123 (26): 1–8. doi:10.1063/5.0171505.