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The numerical simulation of CIS/CISSe graded band gap solar cell using SCAPS-1D software.
- Source :
-
Journal of Nanoparticle Research . Dec2023, Vol. 25 Issue 12, p1-13. 13p. - Publication Year :
- 2023
-
Abstract
- In this paper, two types of single absorber layer solar cells, Mo/p-CIS/n-CdS/Al-ZnO and Mo/p-CISSe/n-CdS/Al-ZnO, are simulated using the solar cell simulation software (SCAPS-1D), and the effect of the thickness of the absorber layer on the photovoltaic performance of the solar cells is investigated. In addition, the total thickness of the CIS/CISSe gradient bandgap absorber layer was specified to be 2.5 μm in the SCAPS-1D simulations, and the structure of the gradient bandgap solar cell was composed of Mo/p-CISSe/p-CIS/n-CdS/Al-ZnO. Using CdS and SnS2 buffer layers, respectively, the optimal photoelectric conversion efficiency (η) of the CIS/CISSe gradient bandgap solar cell is 23.23% and 23.52% at a CIS/CISSe layer thickness ratio of 1 μm/1.5 μm, which means that SnS2 can be used as a buffer layer for Cd-free solar cells. With the increase in carrier concentration in the buffer layer, the carrier transport mechanism changes from a leakage current mechanism to tunneling current mechanism. As a result, optimal open-circuit voltage (Voc), short circuit current (Jsc), filling factor (FF), and η of Mo/p-CISSe/ p-CIS /n-SnS2/Al-ZnO solar cell are 0.7809 V, 35.31 mA/cm2, 85.29%, and 23.52%, respectively, which uses the best impact parameters including CIS/CISSe absorption layer thickness ratio of 1 μm/1.5 μm, working temperature 300 K, and the carrier concentration of 1E + 18 cm−3. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13880764
- Volume :
- 25
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Nanoparticle Research
- Publication Type :
- Academic Journal
- Accession number :
- 174559588
- Full Text :
- https://doi.org/10.1007/s11051-023-05906-z